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NTQS6463
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
STATIC
Gate Threshold Voltage (V DS = V GS , I D = ?250 μ A)
Gate?Body Leakage (V GS = 0 V, V GS = ± 8 V)
V GS(th)
I GSS
?0.45
?
?0.9
?
?
± 100
V
nA
Zero Gate Threshold Voltage Drain Current
I DSS
μΑ
(V DS = ?16 V, V GS = 0 V)
(V DS = ?16 V, V GS = 0 V, T J = 70 _ C)
Drain?Source On?State Resistance (Note 4)
(V GS = ?4.5 V, I D = ?6.8 A)
(V GS = ?2.5 V, I D = ?5.5 A)
R DS(on)
?
?
?
?
?
?
0.016
0.022
?1.0
?10
0.020
0.027
?
Forward Transconductance (V DS = ?15 V, I D = ?6.8 A) (Note 4)
Diode Forward Voltage (I S = ?1.3 A, V GS = 0 V) (Note 4)
g FS
V SD
?
?
21
?0.71
?
?1.1
S
V
DYNAMIC
Total Gate Charge
Gate?Source Charge
Gate?Drain Charge
Turn?On Delay Time
Rise Time
Turn?Off Delay Time
Fall Time
Source?Drain Reverse Recovery Time
(V DS = ?10 V,
V GS = ?5.0 V,
I D = ?6.8 A)
(V DD = ?10 V,
I D ? ?1.0 A,
V GS = ?4.5 V,
R G = 6.0 ? )
(I F = ?1.3 A, di/dt = 100 A/ μ s)
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
t rr
?
?
?
?
?
?
?
?
28
5.5
9.0
15
22
90
53
45
50
?
?
25
40
150
90
80
nC
ns
ns
4. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2%.
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